page1of5 semiconductor 6pt series rohs rohs stansard scrs, 6a symbol i t rms ( ) rms on state current full sine wave 6 i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 24.5 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 70 73 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 6 a v ma 15 600 to 1000 description v 600 to1000 t =125oc j v drm v rrm repetitivepeakoffstatevoltage repetitivepeakreversevoltage (180conductionangle) 4 1 averageonstatecurrent (180conductionangle) i t av ( ) 3.8 a 1 2 3 1 2 3 2 2 2 1 2 3 to-220ab (non-lnsulated) to-251 (i-pak) to-252 (d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (6ptxxf) (6ptxxg) (6ptxxa) (6ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com to251/to252/to220ab to220abinsulated tc=110c tc=105c maximumgatepower p gm w 10 t =20 p s the 6pt series of silicon controlled rectifiers are high performance glass passivated technology, and are designedforpowersupplyupto400hzonresistiveor inductiveload. t =125oc j to251/to252/to220ab to220abinsulated tc=110c tc=105c
page2of5 semiconductor 6pt series rohs rohs note : xx voltage = 6ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =30 d l v =v ,r =3.3k d drm l r =220,t =110c gk j i =100ma,gateopen t i =1.2 i g gt v =67%v , gateopen,t =110c d drm j 1.3 0.2 30 50 200 ma vv ma v/s i =12a, t t =380s p t =110c j t =25c j t =25c j v a electrical specifications ( t j = 25 ) unless otherwise specified oc test conditions symbol v =v ,v =v d drm r rrm 1.6 5 2 r =220 gk max. max. min. max. min. min. max. max. max. 15 thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient 2.5 60 c/w c/w unit value symbol parameter ipak/dpak/to220ab to252(dpak) to220ab to251(ipak) 70 100 s=0.5cm 2 v gt www.nellsemi.com s 70 t q t =110c j typ. v =67%v , i ,v =25v d drm r tm =12a di =30a/ dv /dt=50v/ tm d s, s product selector part number voltage x x ( ) sensitivity 600 v a 15 m 1000 v 6ptxxa/6ptxxal 6ptxxf 6ptxxg v v 800 v v package to220ab dpak v v v v v v ipak a 15 m a 15 m ordering information 6ptxxa 6ptxxa ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 6ptxxai 6ptxxai 2.3g 50 tube 6ptxxf 6ptxxf to251(ipak) 0.40g 80 6ptxxg 6ptxxg 0.38g 80 tube to252(dpak) to220ab(insulated) tube
page3of5 semiconductor rohs rohs 6pt series ordering information scheme scr series package type current voltage code a to220ab(noninsulated) = ai to220ab(insulated) = 6=6a,i t(rms) 6 pt 06 06=600v f=to251(ipak) g=to252(dpak) 08=800v www.nellsemi.com 10=1000v fig.1 maximum average power dissdipation versusaverageonstatecurrent fig.2 correlation between maximum average powerdissipationandmaximum allowabletemperature(t andt ) amb lead =60 =90 =120 =180 dc =30 i t(av) (a) 360 =180 r th =15 c/w r th =10 c/w r th =5 c/w r th =0 c/w tamb( c) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 4.5 5.0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 125 110115 120 0 20 40 60 80 100 120 140 p w ( ) p w ( ) t (c) lead
semiconductor rohs rohs page4of5 i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l 6pt series www.nellsemi.com fig.5 relative variation of gate trigger current junction temperature versus fig.8 onstate characteristics (maximum values) 10 100 1 2 5 10 fig.6 surge peak onstate current versus number of cycles 2.5 80 1 10 100 1000 i (a) t(av) 70 i gt t j (c) i &i h l 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 80 90 100 110 20 30 10 40 tp=10ms onecycle tjinital=25c numberofcycles 60 50 40 30 20 10 0 i (a),i2t(a2s) tsm tjinital=25 c i tsm i2t t p (ms) fig.7 nonrepetitive surge peak onstate current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of l2t tj=25c tj=max i (a) tm v (v) tm tjmax v =0.1v t0 rd=46m 1 2 4 3 5 1 10 100 fig.3 average onstate current versus case temperature fig.4 relative variation of thermal impedance versuspulseduration dc =180 t case (c) t p (s) z th(ja) z th(jc) 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 0.1 0.01 1 e-3 1 e-2 1 e-1 1 e+0 1 e+1 1 e+2 5e+2 i (av)(a) t k=[zth(jc)/rth(jc)] to251/to252 to220ab to220ab insulated
semiconductor rohs rohs 6pt series rohs 1 2 2 3 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) to-252 (d-pak) case style page5of5 (g)3 1(a1) (a2) 2 www.nellsemi.com 4t 6.4(0.52) 6.6(0.26) 5.2(0.204) 5.4(0.212) 1.5(0.059) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) to-251 (i-pak) 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab
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